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| DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. Features http://onsemi.com NPN SILICON DIGITAL TRANSISTORS PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-723 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb-Free Devices PIN 1 BASE (INPUT) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 3 SOT-723 CASE 631AA STYLE 1 2 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM xx xx = Specific Device Code (See Marking Table on page 2) M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 1 March, 2006 - Rev. 3 Publication Order Number: DTC114EM3/D M DTC114EM3T5G Series DEVICE MARKING AND RESISTOR VALUES Device DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G* DTC124XM3T5G* DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G* DTC144TM3T5G Marking 8A 8B 8C 8D 8E 8F 8H 8J 8K 8L 8M 8N 8P 8T R1 (K) 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 R2 (K) 10 22 47 47 2.2 4.7 47 47 47 100 22 SOT-723 (Pb-Free) 8000/Tape & Reel Package Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Available upon request. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range 1. FR-4 @ minimum pad. 2. FR-4 @ 1.0 x 1.0 inch pad. Symbol PD 260 2.0 RqJA PD 600 4.8 RqJA TJ, Tstg 205 -55 to +150 mW mW/C C/W C 480 mW mW/C C/W Max Unit http://onsemi.com 2 DTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G DTC144TM3T5G ICBO ICEO IEBO - - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 0.2 - - nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G DTC144TM3T5G V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 160 - 60 100 140 140 350 350 15 30 200 150 140 150 140 350 - - - - - - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTC123EM3T5G (IC = 10 mA, IB = 1 mA) DTC143TM3T5G/DTC114TM3T5G/ DTC143EM3T5G/DTC143ZM3T5G/ DTC124XM3T5G/DTC144TM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) DTC114EM3T5G DTC124EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC144EM3T5G DTC144TM3T5G DTC115EM3T5G DTC144WM3T5G VCE(sat) VOL - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 DTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic ON CHARACTERISTICS (Note 4) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTC143TM3T5G DTC143ZM3T5G DTC114TM3T5G DTC144TM3T5G Input Resistor DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G DTC144TM3T5G DTC114EM3T5G/DTC124EM3T5G/ DTC144EM3T5G/DTC115EM3T5G DTC114YM3T5G DTC143TM3T5G/DTC114TM3T5G/DTC144TM3T5G DTC123EM3T5G/DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC144WM3T5G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. Symbol VOH Min 4.9 Typ - Max - Unit Vdc Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 kW Resistor Ratio R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 300 250 200 150 100 50 0 -50 RqJA = 480C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 4 DTC114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC114EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 VCE = 10 V TA = 75C 25C -25C 100 0.01 0.001 hFE , DC CURRENT GAIN (NORMALIZED) 50 0 20 40 IC, COLLECTOR CURRENT (mA) 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 25C TA = -25C C ob, CAPACITANCE (pF) 3 2 1 0.01 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 DTC114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC124EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 IC/IB = 10 TA = -25C 25C 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 0.1 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 10 1 0.1 0.01 75C 25C TA = -25C C ob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 DTC114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC144EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 25C TA = -25C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 DTC114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC114YM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C -25C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 DTC114EM3T5G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source http://onsemi.com 9 DTC114EM3T5G Series PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE B -X- D b1 -Y- 3 A E 1 2 L C HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 e b 2X 0.08 (0.0032) X Y STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 DTC114EM3/D |
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